Explanation
porous silicon can be formed by anodic oxidation of cinnamon chips in hydrofluoric acid containing electrolyte with appropriate current density, or preferential corrosion of silicon wafer in hydrofluoric acid containing solution and strong oxidant, which was first prepared in 1956. The porosity of porous silicon is generally 60% -90%, and its surface area is large, up to 100-1000m2. With its large surface area and easy oxidation, it has been used to prepare isolation layers and silicon wafer for integrated circuits.
Classification
Information materials -> Semiconductor materials -> Semiconductor materials