Explanation

The transformation of a thin film on a single crystal substrate of a materials from an amorphous phase to a crystal phase. Generally, an amorphous film is deposited on a single crystal substrate of a certain materials first, and then the substrate is heated to a certain temperature to crystallize the amorphous film, and the substrate plays the role of seed crystal. To convert the amorphous film into a single crystal, a sufficiently high crystallization temperature, the quality and cleanliness of the substrate surface, and the crystallization conditions put forward very high requirements. In some cases, crystallization is required under ultra-high vacuum conditions. Generally, it is difficult to obtain high-quality epitaxial layers by solid phase epitaxy. In the ion implantation doping of silicon wafer, the amorphous layer formed near the surface of silicon wafer can be recrystallized into a complete single crystal layer in the subsequent annealing process.

Classification