Explanation

The gas or solid vapor required for ionization in the vacuum system, after the ion beam is drawn out, is directly injected into the central solid materials with thousands to hundreds of kiloelectron volts after acceleration, forming a certain depth of ion implantation layer. By changing the structure and composition of surface of materials, the purpose of improving the mechanical properties and physical chemistry properties of materials is achieved. It is a process of surface of materials modification. Particle implantation has been widely used in semiconductor microelectronics for doping, making insulating barrier, forming silicide and synthesizing SOI materials. The research on improving the mechanical properties, oxidation resistance and corrosion resistance of metal and alloy materials is also widely carried out. In addition, ion implantation has also been used to study the surface modification of materials such as ceramics, polymer, insulators, high temperature superconductors, diamond, etc. As an important means of surface of materials modification, ion implantation has many advantages: ① almost all elements can be implanted without the limitation of solid solid solubility; ② Injection modification can be carried out on various substrates; ③ Injection can be carried out at low temperature, room temperature, and high temperature; ④ The depth, concentration, and distribution of implanted ions are easy to control and replicate; ⑤ Adopting clean vacuum technology, pollution-free, clean, safe, and fast; ⑥ There is no discontinuous interface between the injection layer and the matrix, or a good simple transition layer can be formed; ⑦ It can be combined with other processes such as PVD and CV to form new ion beam surface treatment technologies. However, the disadvantages of ion implantation are: ① the implantation layer is too shallow; ② The sight of ion implantation makes it difficult to inject parts with complex shapes.

Classification