Explanation

stacking fault often occur on epitaxial growth silicon monocrystals. stacking fault are often found on the surface of silicon monocrystals after thermal oxidation at 900~1200 ℃. These stacking faults caused by the oxidation process are called OISF. Because each stacking fault is bound to a part of dislocation, the influence of stacking fault on the electrical properties of silicon wafer is similar to that of dislocation.

Classification