Explanation

On a sufficiently high temperature semiconductor substrate surface, an epitaxial layer is grown along the substrate crystal direction through gas reactants and dopants containing the desired epitaxial layer. It belongs to chemical gas: phase deposition, including: ① transport of growth components to the substrate surface. ② The components decompose on the substrate surface, and ③ sediment atoms or closed clusters migrate on the substrate surface - ④ enter the crystallization (growth) front, ultimately forming an epitaxial layer. The most widely used epitaxial silicon wafer are fabricated by vapor phase epitaxy.

Classification