Explanation

It refers to the growth method of one crystal on the surface of another crystal. The growth of crystal should generally be similar to the physical properties and structural crystallography of the substrate crystal. crystal is grown on the structure matching interface, which is called epitaxial directional growth. According to the different bottom crystalline materials, there are two methods: homogeneous epitaxy and heterogeneous epitaxy. According to the different states of the growth system. Epitaxy can also be divided into vapour phase epitaxial growth method, liquid phase epitaxy, and melt epitaxy, which are commonly used for film growth. In epitaxial growth, the selection of the substrate is crucial. In addition to the lattice matching with the deposited crystal, the number of defects represented by the crystal, the cleanness of the substrate surface, whether there is mechanical damage and coarse impurity accumulation will all affect the growth and quality of the epitaxial film. In addition, the deposition speed and atmosphere will also affect the quality of the epitaxial film. This method is commonly used in the production of electronic instruments, magnetic memory devices, and integrated optics, and is increasingly playing an important role.

Classification