Explanation

Also known as the Czech Laski method. It is the most widely used method in melt growth of crystal, and can grow large and dislocation free crystal in a relatively short time. To achieve successful lifting, crystal must be melted without decomposition in the same composition, with low vapor pressure and viscosity, and materials will not react with crucible or growth atmosphere. The melting point of materials is lower than the melting point of the crucible. In the process of crystal growth, proper temperature gradient, rotation speed, pulling speed and growth atmosphere must be selected. The seed crystal used is oriented accurately. When pulling, ensure that the rotation center of the seed crystal is at the center of the temperature gradient, avoid introducing growth layers, and select appropriate solid-liquid interface. The flat interface is beneficial to improve the quality of crystal. When growing crystal, first melt the raw material, preheat the seed crystal, then introduce the rotating seed crystal into the melt, slowly pull it after micro melting, so that the seed becomes larger (shoulder stage). When the crucible temperature reaches constant? crystal began to grow in equal diameter. After the crystal grows to the required length, the crystal is separated from the melt and taken out after annealing. The improved pulling method method introduces automatic control of equal diameter growth, mold guide and liquid seal technology, which improves the quality of crystal grown by pulling method method and improves the utilization rate. There are many crystal grown by pulling method method.

Classification