Explanation

A method for continuously growing a thin layer of single crystal with specific parameters along its crystal direction on a single crystal substrate. According to the chemical composition of backing materials and epitaxial materials, it can be divided into: true homoepitaxy, pseudo homoepitaxy, true heteroepitaxy and pseudo heteroepitaxy. True homoepitaxy refers to the chemical composition of the substrate and the epitaxial layer, including the dopant and concentration are identical, and the obtained materials have little application value. Pseudohomoepitaxy refers to the phenomenon where the main chemical components of the substrate and epitaxial layer are the same, but their dopants or doping concentrations are different. It is abbreviated as homoepitaxy. True heteroepitaxy refers to the chemical composition of the substrate and epitaxial layer being completely different, while pseudo heteroepitaxy refers to the chemical composition of the substrate and epitaxial layer having one or some of the same components, both of which are called heteroepitaxy. The methods include chemical vapor phase epitaxy, liquid phase epitaxy, solid phase epitaxy, molecular beam epitaxy, ion beam (cluster) epitaxy, chemical molecular beam epitaxy, etc. Chemical vapor epitaxy and liquid phase epitaxy are mainly used in industrial production; For high-precision ultra-thin epitaxy, molecular beam epitaxy or metal organic chemical vapor phase epitaxy is used. It can improve the quality of single crystal, form various compounds, and prepare single crystal and solid solution, multi-layer and ultra-thin materials that are difficult to be prepared by bulk single crystal growth method.

Classification