Explanation

The general name of defects, dislocations and stacking faults formed by the aggregation of impurities or point defects in semiconductors. The maximum size is about tens of microns, generally in the micron and submicron scales, so it is called microdefect. The precipitate formed by impurity aggregation itself belongs to. When the precipitate is large enough, secondary microdefect such as stacking faults and dislocation will be induced. The self gap defects (such as dislocation loop) and vacancy type defects (such as voids) are formed by the aggregation of point defects. The impact on semiconductor devices is a win-win situation. Taking the most important semiconductor monocrystalline silicon as an example, if microdefect exist on the surface of silicon monocrystalline chips, the yield of devices will be reduced; When micro defects exist within the body of a silicon single crystal chip, they can absorb harmful surface contamination, which is beneficial for improving device performance

Classification