Explanation

It is a kind of vacancy type point defect formed by atoms or ions leaving the original lattice position in crystal structure. Each vacancy is an independent Schottky defect. The movement of vacancy in metals is one of the important diffusion mechanisms, and the theoretical calculation of vacancy diffusion mechanism is the closest to the experimental results. The climb of dislocation in crystal also depends on the movement of vacancy. A single cation vacancy or anion vacancy in an ionic crystal combines with electrons or holes to form a color centers. vacancy in semiconductor has a significant effect on electrical properties. Generally speaking, as the temperature increases, the concentration of defects will increase. For typical ionic crystal alkali halide, the formation energy of Schottky defect is low. For oxide, its ionicity is obviously smaller than that of alkali halide, so its formation energy is high. It becomes important only at a higher temperature.

Classification